The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate
Identifieur interne : 000064 ( France/Analysis ); précédent : 000063; suivant : 000065The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate
Auteurs : M. R. Khelladi [Algérie] ; L. Mentar [Algérie] ; A. Azizi [Algérie] ; L. Makhloufi [Algérie] ; G. Schmerber [France] ; A. Dinia [France]Source :
- Journal of materials science. Materials in electronics [ 0957-4522 ] ; 2012.
Descripteurs français
- Pascal (Inist)
- Dépôt électrolytique, Voltammétrie, Dissolution, Spectrométrie absorption atomique, Microscopie électronique balayage, Structure dendritique, Conception compacte, Microstructure, Morphologie, Diffractométrie RX, Grosseur grain, Granulométrie, Paramètre cristallin, Aimantation, Cobalt alliage, Cuivre, Couche mince, Silicium, Semiconducteur type n, Réseau cubique face centrée, Fabrication microélectronique, 0779, 6865, 8540H.
- Wicri :
- topic : Cuivre.
English descriptors
- KwdEn :
- Atomic absorption spectrometry, Cobalt alloy, Compact design, Copper, Dendritic structure, Dissolution, Electrodeposition, FCC lattices, Grain size, Grain size analysis, Lattice parameters, Magnetization, Microelectronic fabrication, Microstructure, Morphology, Scanning electron microscopy, Silicon, Thin film, Voltammetry, X ray diffractometry, n type semiconductor.
Abstract
The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.
Affiliations:
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Pascal:13-0039943Le document en format XML
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R." last="Khelladi">M. R. Khelladi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000 Sétif</wicri:noRegion></affiliation></author><author><name sortKey="Mentar, L" sort="Mentar, L" uniqKey="Mentar L" first="L." last="Mentar">L. Mentar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000 Sétif</wicri:noRegion></affiliation></author><author><name sortKey="Azizi, A" sort="Azizi, A" uniqKey="Azizi A" first="A." last="Azizi">A. Azizi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000 Sétif</wicri:noRegion></affiliation></author><author><name sortKey="Makhloufi, L" sort="Makhloufi, L" uniqKey="Makhloufi L" first="L." last="Makhloufi">L. Makhloufi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire de Technologie Des Materiaux et Genie Des Procédés, Universite de Bejaia</s1><s2>Bejaia</s2><s3>DZA</s3><sZ>4 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Bejaia</wicri:noRegion></affiliation></author><author><name sortKey="Schmerber, G" sort="Schmerber, G" uniqKey="Schmerber G" first="G." last="Schmerber">G. 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Dinia</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Institut de Physique et Chimie Des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS, Universite de Strasbourg, 23 Rue Du Loess, BP 43</s1><s2>67034 Strasbourg</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Grand Est</region><region type="old region" nuts="2">Alsace (région administrative)</region><settlement type="city">Strasbourg</settlement></placeName><orgName type="university">Université de Strasbourg</orgName></affiliation></author></analytic><series><title level="j" type="main">Journal of materials science. Materials in electronics</title><title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title><idno type="ISSN">0957-4522</idno><imprint><date when="2012">2012</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Journal of materials science. Materials in electronics</title><title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title><idno type="ISSN">0957-4522</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic absorption spectrometry</term><term>Cobalt alloy</term><term>Compact design</term><term>Copper</term><term>Dendritic structure</term><term>Dissolution</term><term>Electrodeposition</term><term>FCC lattices</term><term>Grain size</term><term>Grain size analysis</term><term>Lattice parameters</term><term>Magnetization</term><term>Microelectronic fabrication</term><term>Microstructure</term><term>Morphology</term><term>Scanning electron microscopy</term><term>Silicon</term><term>Thin film</term><term>Voltammetry</term><term>X ray diffractometry</term><term>n type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt électrolytique</term><term>Voltammétrie</term><term>Dissolution</term><term>Spectrométrie absorption atomique</term><term>Microscopie électronique balayage</term><term>Structure dendritique</term><term>Conception compacte</term><term>Microstructure</term><term>Morphologie</term><term>Diffractométrie RX</term><term>Grosseur grain</term><term>Granulométrie</term><term>Paramètre cristallin</term><term>Aimantation</term><term>Cobalt alliage</term><term>Cuivre</term><term>Couche mince</term><term>Silicium</term><term>Semiconducteur type n</term><term>Réseau cubique face centrée</term><term>Fabrication microélectronique</term><term>0779</term><term>6865</term><term>8540H</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.</div></front></TEI><affiliations><list><country><li>Algérie</li><li>France</li></country><region><li>Alsace (région administrative)</li><li>Grand Est</li></region><settlement><li>Strasbourg</li></settlement><orgName><li>Université de Strasbourg</li></orgName></list><tree><country name="Algérie"><noRegion><name sortKey="Khelladi, M R" sort="Khelladi, M R" uniqKey="Khelladi M" first="M. R." last="Khelladi">M. R. Khelladi</name></noRegion><name sortKey="Azizi, A" sort="Azizi, A" uniqKey="Azizi A" first="A." last="Azizi">A. Azizi</name><name sortKey="Makhloufi, L" sort="Makhloufi, L" uniqKey="Makhloufi L" first="L." last="Makhloufi">L. Makhloufi</name><name sortKey="Mentar, L" sort="Mentar, L" uniqKey="Mentar L" first="L." last="Mentar">L. Mentar</name></country><country name="France"><region name="Grand Est"><name sortKey="Schmerber, G" sort="Schmerber, G" uniqKey="Schmerber G" first="G." last="Schmerber">G. Schmerber</name></region><name sortKey="Dinia, A" sort="Dinia, A" uniqKey="Dinia A" first="A." last="Dinia">A. Dinia</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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